Silicon Carbide High Temperature Furnace - c.ACTIVATOR 150
High Temperature für SiC Annealing - c.ACTIVATOR 150
Activator 150: Automated Wafer Handling
Example Profile for SiC Annealing Process


商先創公司已經開發出c.ACTIVATOR 150高溫爐生產線,用于碳化硅(SiC)或氮化鎵(GaN)器件的離子注入后退火。c.ACTIVATOR 150有各種各樣的版本可供作為研發與系列生產加熱爐使用,具有很高的工藝靈活性。

商先創公司獨一無二的無金屬加熱設計使加工溫度提高到2000°C,并縮短了加工周期時間。由于占地面積小,擁有成本低,c.ACTIVATOR 150有利于提高生產的成本效益。


  • High activation rate
  • Minimal surface roughness
  • Temperatures up to 2000°C
  • Processing of wafer sizes from 2“ to 150 mm
  • Batch size 5 or 50 wafers
  • Heating rate up to 100 K/min


  • 退火碳化硅與氮化鎵晶圓
  • 石墨烯發展


Graph: Hole Sheet Density
Graph: Sheet Resistance
Graph: Hole Mobility

Hole Sheet Density

The hole sheet density Ns increases with annealing temperature almost linear from 1650°C all the way up to 2050°C.
The el. activation grade at room temperature increases from 0.28% to 3.7% by factor ~13 with an implanted dose of 3x1015cm2.
3.7% el. activation at room temperature is close to the maximum obtained if all Al atoms are on SiC lattice sites.

Hole Mobility

At the same time the hole mobility decreases from 18cm2/Vs to 10cm2/Vs by factor 1.8.
The lower mobilities are probably caused by scattering on the ionized Al atoms which have energy levels ~0.22 eV above the VB.

Sheet Resistance

The sheet resistance was calculated by multiplication of the Hall mobility and sheet hole concentration.
It decreases from 41000 Ohm/sq to 6000 Ohm/sq by factor 6.8.


Annealing temperatures up to 1950 °C are clearly beneficial to reduce Rs. If high carrier concentrations are more important than high mobilities, as required to achieve low contact resistances, very high annealing temperatures even above 1950 °C can be desirable.